BAV101 [BL Galaxy Electrical]
SMALL SIGNAL SWITCHING DIODE; 小信号开关二极管
| 型号： | BAV101 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | SMALL SIGNAL SWITCHING DIODE |
| 文件： | 总2页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
BAV101~BAV103
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES
Unit : inch (mm)
MINI-MELF/LL-34
300 mWatts
POWER
VOLTAGE 120 to 250 Volts
FEATURES
• Fast switching Speed.
• Surface Mount Package Ideally Suited For Automatic Insertion.
• Silicon Epitaxal Planar Construction.
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
MECHANICALDATA
.020(0.5)
.012(0.3)
.020(0.5)
.012(0.3)
• Case: Mini Melf, Glass
.146(3.7)
.130(3.3)
• Terminals: Solderable per MIL-STD-202E, Method 208
• Polarity: Cathode Band
• Marking: Cathode Band Only
• Weight: 0.03 grams
• Packing information
T/R - 2.5K per 7" plastic Reel
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted)
PA R A M E TE R
S YM B O L
B AV 101
100
B AV 102
150
B AV 103
U N ITS
R everse Voltage
V
R
200
250
V
V
P eak R everse Voltage
V
R M
120
200
200
R ectified C urrent (A verage), H alf W ave R ectification w ith
R esistive Load and f >=50 H z
IO
m A
A
P eak Forw ard S urge C urrent, t=1.0s
IFS M
1.0
P ow er D issipation D erate A bove at 25O
M axim um Forw ard Voltage, IF = 100m A
C
P
D
F
300
m W
V
V
1.0
M axim um D C R everse C urrent at R ated D C B locking
Voltage T
25O
IR
0.1
uA
J
=
C
TypicalJunction C apacitance( N ote 1)
M axim um R everse R ecovery (N ote 2)
M axim um Therm alR esistance
C J
0.95
pF
ns
T
R R
75
R θJA
350
O C / W
O C
O peration Junction S torage Tem perature R ange
T
S TG
-65 TO +175
NOTE:
1. CJ at VR=0, f=1MHZ
2. From IF=10mA to IR=-1mA, VR=6Volts, RL=100Ω
PAGE . 1
STAD-JUL.30.2004
RATING AND CHARACTERISTIC CURVES
1.1
100
1.0
0.9
10
-25OC
25OC
0.8
0.7
1.0
75OC
TA
=125OC
0.6
0.2
0
1
2
3
4
5
0
.4
.8
1.2
1.6
REVERSE VOLTAGE, VOLTS
FORWARD VOLTAGE, VOLTS
Fig.2 TYPICAL CAPACITANCE vs REVERSE VOLATGE
Fig.1 FORWARD CHARACTERISTICS
14
12
10
8
6
4
2
0
0
1
10
100
1000
PULSE WIDTH, ms
Fig. SURGE CURRENT CHARACTERISTIC
PAGE . 2
STAD-JUL.30.2004
相关型号：
BAV101/T3
DIODE 0.25 A, 120 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, SMD, 2 PIN, Signal Diode
NXP
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